data sheet caution observe precautions when handling because these devices are sensitive to electrostatic discharge. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec compound semiconductor devices representative for availability and additional information. hetero junction field effect transistor ne3508m04 l to s band low noise amplifier n-channel hj-fet document no. pg10586ej01v0ds (1st edition) date published december 2005 cp(k) printed in japan ? nec compound semiconductor devices, ltd. 2005 features ? super low noise figure and high associated gain nf = 0.45 db typ., g a = 14 db typ. @ f = 2 ghz, v ds = 2 v, i d = 10 ma flat-lead 4-pin thin-type super minimold (m04) package applications satellite radio (sdars, dmb, etc.) antenna lna low noise amplifier for microwave communication system ordering information part number order number pack age quantity marking supplying form ne3508m04 ne3508m04-a 50 pcs (non reel) v79 ne3508m04-t2 NE3508M04-T2-A flat-lead 4-pin thin- type super minimold (m04) (pb-free) 3 kpcs/reel 8 mm wide embossed taping pin 1 (source), pin 2 (drain) face the perforation side of the tape remark to order evaluation samples, contact your nearby sales office. part number for sample order: ne3508m04 absolute maximum ratings (t a = +25 c) parameter symbol ratings unit drain to source voltage v ds 4.0 v gate to source voltage v gs ? 3.0 v drain current i d i dss ma gate current i g 400 a total power dissipation p tot note 175 mw channel temperature t ch +150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pcb
data sheet pg10586ej01v0ds 2 ne3508m04 recommended operating conditions (t a = +25 c) parameter symbol min. typ. max. unit drain to source voltage v ds ? 2 3 v drain current i d ? 10 30 ma input power p in ? ? 0 dbm electrical characteristics (t a = +25 c, unless otherwise specified) parameter symbol test conditions min. typ. max. unit gate to source leak current i gso v gs = ? 3 v ? 1 20 a saturated drain current i dss v ds = 2 v, v gs = 0 v 60 90 120 ma gate to source cutoff voltage v gs (off) v ds = 2 v, i d = 100 a ? 0.25 ? 0.5 ? 0.75 v transconductance g m v ds = 2 v, i d = 10 ma 100 ? ? ms noise figure nf v ds = 2 v, i d = 10 ma, f = 2 ghz ? 0.45 0.7 db associated gain g a 12 14 ? db gain 1 db compression p o (1 db) v ds = 3 v, i d = 30 ma (non-rf), ? 18 ? dbm output power f = 2 ghz
data sheet pg10586ej01v0ds 3 ne3508m04 typical characteristics (t a = +25 c, unless otherwise specified) total power dissipation p tot (mw) ambient temperature t a (?c) vs. ambient temperature total power dissipation 250 200 150 100 50 0 50 100 150 200 250 mounted on glass epoxy pcb (1.08 cm 2 1.0 mm (t) ) v ds = 2 v 100 90 80 70 60 50 40 30 20 10 0 ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 drain current i d (ma) gate to source voltage v gs (v) drain current vs. gate to source voltage 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 6 8 10 12 14 18 4 2 16 0 0 5 10 15 frequency f (ghz) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. frequency minimum noise figure, nf min g a v ds = 2 v i d = 10 ma drain current i d (ma) drain to source voltage v ds (v) drain to source voltage drain current vs. 100 20 40 60 80 0 12345 v gs = 0 v ? 0.2 v ? 0.3 v ? 0.1 v ? 0.4 v ? 0.5 v drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, 10 02040 30 f = 2 ghz v ds = 2 v 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 12 14 16 18 6 8 10 2 4 0 nf min g a 3.0 1.0 1.5 2.0 2.5 3.5 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 12 14 16 18 6 8 10 2 4 0 minimum noise figure nf min (db) associated gain g a (db) vs. drain to source voltage minimum noise figure, associated gain drain to source voltage v ds (v) nf min g a f = 2 ghz i d = 10 ma remark the graphs indicate nominal characteristics.
data sheet pg10586ej01v0ds 4 ne3508m04 drain current i d (ma) minimum noise figure nf min (db) associated gain g a (db) associated gain vs. drain current minimum noise figure, 10 02040 30 f = 2.5 ghz v ds = 2 v 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 12 14 16 18 6 8 10 2 4 0 nf min g a 3.0 1.0 1.5 2.0 2.5 3.5 2.0 1.2 1.4 1.6 1.8 0.6 0.8 1.0 0.2 0.4 0.0 20 12 14 16 18 6 8 10 2 4 0 minimum noise figure nf min (db) associated gain g a (db) vs. drain to source voltage minimum noise figure, associated gain drain to source voltage v ds (v) nf min g a f = 2.5 ghz i d = 10 ma output power p out (2 tone) (dbm) 3rd order intermodulation distortion im 3 (dbm) input power p in (2 tone) (dbm) ? 25 ? 20 ? 15 10 15 20 5 ? 10 ?5 0 25 40 30 20 ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 10 0 i d im 3 (l) im 3 (h) iip 3 = 17.5 dbm oip 3 = 34 dbm 50 0 30 35 40 45 25 5 10 15 20 drain current i d (ma) p out (2 tone) f = 2.5 ghz, v ds = 3 v i d = 30 ma (non-rf) vs. input power output power, im 3, drain current remark the graphs indicate nominal characteristics.
data sheet pg10586ej01v0ds 5 ne3508m04 s-parameters s-parameters/noise parameters are provided on the nec compound semiconductor devices web site in a form (s2p) that enables direct import to a microwave circuit simulator without keyboard input. click here to download s-parameters. [rf and microwave] [device parameters] url http://www.ncsd.necel.com/
data sheet pg10586ej01v0ds 6 ne3508m04 package dimensions flat-lead 4-pin thin-type super minimold (m04) (unit: mm) pin connections 1. source 2. drain 3. source 4. gate 0.590.05 0.11 +0.1 ?0.05 (bottom view) 43 12 1.25 2.00.1 1.30 (1.05) 0.60 0.65 0.65 0.65 1.30 1.25 2.00.1 12 43 1.250.1 2.050.1 0.30 +0.1 ?0.05 0.40 +0.1 ?0.05 0.30 +0.1 ?0.05 0.30 +0.1 ?0.05 v79
data sheet pg10586ej01v0ds 7 ne3508m04 mounting pad dimensions (reference only) flat-lead 4-pin thin-type super mi nimold (m04) package (unit: mm) 2 1 3 4 0.6 1.6 1.25 1.3 0.6 0.5
data sheet pg10586ej01v0ds 8 ne3508m04 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recomm ended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below ir260 partial heating peak temperatur e (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin fl ux (% mass) : 0.2%(wt.) or below hs350 caution do not use different soldering met hods together (except for partial heating).
data sheet pg10586ej01v0ds 9 ne3508m04 when the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the au thority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license . m8e 00. 4 - 0110 the information in this document is current as of december, 2005. the information is subject to change without notice. for actual design-in, refer to the latest publications of nec's data sheets or data books, etc., for the most up-to-date specifications of nec semiconductor products. not all products and/or types are available in every country. please check with an nec sales representative for availability and additional information. no part of this document may be copied or reproduced in any form or by any means without prior written consent of nec. nec assumes no responsibility for any errors that may appear in this document. nec does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of nec semiconductor products listed in this document or any other liability arising from the use of such products. no license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec or others. descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. nec assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. while nec endeavours to enhance the quality, reliability and safety of nec semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. to minimize risks of damage to property or injury (including death) to persons arising from defects in nec semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. nec semiconductor products are classified into the following three quality grades: "standard", "special" and "specific". the "specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. the recommended applications of a semiconductor product depend on its quality grade, as indicated below. customers must check the quality grade of each semiconductor product be fore using it in a particular application. "standard": computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "special": transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "specific": aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. the quality grade of nec semiconductor products is "standard" unless otherwise expressly specified in nec's data sheets or data books, etc. if customers wish to use nec semiconductor products in applications not intended by nec, they must contact an nec sales representative in advance to determine nec's willingness to support a given application. (note) (1) "nec" as used in this statement means nec corporation, nec compound semiconductor devices, ltd. and also includes its majority-owned subsidiaries. (2) "nec semiconductor products" means any semiconductor product developed or manufactured by or for nec (as defined above). ? ? ? ? ? ?
nec compound semiconductor devices hong kong limited e-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) hong kong head office taipei branch office korea branch office tel: +852-3107-7303 tel: +886-2-8712-0478 tel: +82-2-558-2120 fax: +852-3107-7309 fax: +886-2-2545-3859 fax: +82-2-558-5209 nec electronics (europe) gmbh http://www.ee.nec.de/ tel: +49-211-6503-0 fax: +49-211-6503-1327 california eastern laboratories, inc. http://www.cel.com/ tel: +1-408-988-3500 fax: +1-408-988-0279 0504 nec compound semiconductor devices, ltd. http://www.ncsd.necel.com/ e-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) sales division tel: +81-44-435-1573 fax: +81-44-435-1579 for further information, please contact ne3508m04 caution gaas products this product uses gallium arsenide (gaas). gaas vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. follow related laws and ordinanc es when disposing of the produc t. if there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. commission a disposal company able to (wit h a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. exclude the product from general industria l waste and household garbage, and ensure that the product is controlled (as industria l waste subject to special c ontrol) up until final disposal. do not burn, destroy, cut, crush, or chemically di ssolve the product. do not lick the product or in any way allow it to enter the mouth.
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